2N7002 Samsung

Manufacturer

Samsung
Mfg Part Number

2N7002
In Stock

11444
Unit Price

$0.060
Lifecycle Status

Discontinued

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Description

N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;

We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.

Specifications

Other Names:	2N7002NTR<br>2N7002NTR-NDR<br>2N7002N<br>2N7002NCT-NDR<br>2156-2N7002-OS<br>2N7002NCT<br>2N7002NDKR
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.115 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	.115 A
Maximum Drain-Source On Resistance:	5 ohm

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