BSS123-7-F Diodes Incorporated

Manufacturer

Diodes Incorporated
Mfg Part Number

BSS123-7-F
In Stock

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Lifecycle Status

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Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;

We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.

Specifications
Feature Benefit Bullets

Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.17 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	6 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	BSS1237F<br>BSS123-FDITR<br>BSS123-FDIDKR<br>BSS123-FDICT
Maximum Feedback Capacitance (Crss):	6 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.17 A
Peak Reflow Temperature (C):	260

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching applications, making it suitable for a wide range of electronic devices.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode for added functionality and versatility in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering high performance in this function.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 100 V

With a high breakdown voltage, this transistor can handle higher voltages without damage, ensuring robustness in operation.

Maximum Drain Current (Abs) (ID): 0.17 A

Capable of handling a maximum drain current of 0.17 A, making it suitable for various power requirements.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can efficiently handle power without overheating.

Maximum Operating Temperature: 150 °C

Operates effectively at high temperatures, suitable for various environmental conditions.

Minimum Operating Temperature: -55 °C

Capable of functioning in low-temperature environments, offering versatility in usage.

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