FDV304P Onsemi

Manufacturer

Onsemi
Mfg Part Number

FDV304P
In Stock

No Quantity Available
Lifecycle Status

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Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;

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Specifications
Feature Benefit Bullets

Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.46 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.35 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.35 W
Maximum Drain-Source On Resistance:	1.1 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	10 pF
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	25 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.46 A
Peak Reflow Temperature (C):	260

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the transistor, making it reliable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low on-resistance and high current capability, making this transistor suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy implementation of circuit protection mechanisms and can also be used in rectification circuits.

Transistor Application: SWITCHING

Specifically designed for switching applications, this transistor offers fast operation and efficient performance in such scenarios.

Surface Mount: YES

Surface mount technology enables easy and compact integration of the transistor onto circuit boards, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 25 V

With a minimum breakdown voltage of 25V, this transistor can handle higher voltages without experiencing breakdown, ensuring reliable operation.

Maximum Drain Current (ID): 0.46 A

Capable of handling a maximum drain current of 0.46A, this transistor is suitable for applications requiring moderate current levels.

Maximum Power Dissipation (Abs): 0.35 W

With a maximum power dissipation of 0.35W, this transistor can effectively dissipate heat generated during operation, preventing overheating.

Maximum Operating Temperature: 150 °C

The high operating temperature range of up to 150°C allows this transistor to withstand elevated temperatures in various environments.

Minimum Operating Temperature: -55 °C

Capable of operating in extremely low temperatures down to -55°C, making it suitable for a wide range of temperature conditions.

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