BSS123,215 by NXP Semiconductors

BSS123,215 NXP Semiconductors

  • Manufacturer
    NXP Semiconductors
  • Mfg Part Number
    BSS123,215
  • In Stock
    13382
  • Unit Price
    $0.060
  • Lifecycle Status
    Transferred

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Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 100 V;

We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.

Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .15 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .36 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 6 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 10 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .17 A
Peak Reflow Temperature (C): 260

Package Body Material: PLASTIC/EPOXY

This material is lightweight and provides good heat dissipation, making the product durable and reliable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher mobility and conductivity, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects the transistor from reverse voltage spikes, enhancing overall performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation in various electronic circuits.

Surface Mount: YES

Easily mountable on PCBs, saving space and facilitating automated assembly processes.

Minimum DS Breakdown Voltage: 100 V

Can handle high voltage applications safely, providing reliable performance in demanding conditions.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and alignment on circuit boards, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and ease of soldering during assembly, ensuring good electrical contact.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control over the transistor's conductivity and enable precise switching operations.

Maximum Drain Current (Abs) (ID): 0.17 A

Capable of handling high currents, making it suitable for power switching applications.

No. of Terminals: 3

The three terminals provide necessary connections for the FET to function effectively in a circuit.

Maximum Power Dissipation (Abs): 0.36 W

Can dissipate heat efficiently, ensuring stable operation under high power conditions.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs and allows for high-density circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics, such as low input capacitance and high switching speeds.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for industrial applications.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its reliability and stability in electronic devices.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, enhancing the FET's reliability in different environments.

Maximum Drain-Source On Resistance: 6 ohm

Low on-resistance results in minimal power loss and improved efficiency in switching applications.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and allows for versatile connections in different applications.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a specified duration during soldering processes without compromising its performance.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during assembly processes, ensuring reliability in manufacturing.

Maximum Feedback Capacitance (Crss): 10 pF

Low feedback capacitance results in minimal signal distortion and improved high-frequency performance in amplifying circuits.

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