BSS123LT1G by Onsemi

BSS123LT1G Onsemi

  • Manufacturer
    Onsemi
  • Mfg Part Number
    BSS123LT1G
  • In Stock
    No Quantity Available
  • Lifecycle Status
    Active

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Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 100 V; Maximum Time At Peak Reflow Temperature (s): 40;

We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.

Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 40
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .17 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 3
Maximum Power Dissipation (Abs): .225 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 6 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: BSS123LT1GOSCT<br>BSS123LT1GOSTR<br>BSS123LT1GOSDKR<br>2156-BSS123LT1G-OS<br>ONSONSBSS123LT1G
JEDEC-95 Code: TO-236
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .17 A
Peak Reflow Temperature (C): 260

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient electron flow and high conductivity in the transistor.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode within the transistor itself.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response time and low power dissipation.

Surface Mount: YES

Enables easy and efficient mounting onto circuit boards.

Minimum DS Breakdown Voltage: 100 V

Ensures reliable operation under high voltage conditions.

Maximum Drain Current (Abs) (ID): 0.17 A

Handles high current levels effectively, suitable for various applications.

Maximum Power Dissipation (Abs): 0.225 W

Efficiently dissipates heat to prevent overheating and ensure stability.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for demanding environments.

Maximum Drain-Source On Resistance: 6 ohm

Provides low resistance for efficient current flow and minimal power loss.

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