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    Diodes Incorporated

BSS138-7-F by Diodes Incorporated

BSS138-7-F Diodes Incorporated

  • Manufacturer
    Diodes Incorporated
  • Mfg Part Number
    BSS138-7-F
  • In Stock
    No Quantity Available
  • Lifecycle Status
    Active

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Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.

Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .2 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 3.5 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 8 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 50 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY, LOW THRESHOLD
Maximum Drain Current (Abs) (ID): .2 A
Peak Reflow Temperature (C): 260

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer higher mobility and faster switching speeds compared to P-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient switching and protection against reverse current flow.

Transistor Application: SWITCHING

Designed for fast and efficient switching applications.

Minimum DS Breakdown Voltage: 50 V

Can withstand high voltages, making it suitable for a variety of voltage applications.

Surface Mount: YES

Easily mountable on circuit boards, saving space and simplifying assembly.

Maximum Drain Current (Abs) (ID): 0.2 A

Able to handle a current of 0.2 A, suitable for low-power applications.

Maximum Power Dissipation (Abs): 0.3 W

Withstands power dissipation of up to 0.3 W, ensuring reliable performance under load.

Maximum Operating Temperature: 150 °C

Operates effectively at high temperatures, providing versatility in various environments.

Maximum Drain-Source On Resistance: 3.5 ohm

Low on-resistance allows for efficient conduction and minimal power loss.

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