FDV303N Onsemi
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ManufacturerOnsemi
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Mfg Part NumberFDV303N
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In StockNo Quantity Available
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Lifecycle StatusActive
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Description
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| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .68 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .35 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .45 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 25 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | .68 A |
| Peak Reflow Temperature (C): | 260 |
Package Body Material: PLASTIC/EPOXY
Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various applications.
Polarity or Channel Type: N-CHANNEL
N-channel transistors generally have better conductivity and efficiency compared to P-channel transistors, making this transistor suitable for high-performance applications.
Configuration: SINGLE WITH BUILT-IN DIODE
Built-in diode allows for better control and functionality in switching applications.
Transistor Application: SWITCHING
Designed specifically for switching applications, ensuring reliable performance in such scenarios.
Surface Mount: YES
Surface mount capability allows for easy and efficient PCB integration.
Minimum DS Breakdown Voltage: 25 V
With a minimum breakdown voltage of 25V, this transistor can handle higher voltages, making it suitable for a wide range of applications.
Package Shape: RECTANGULAR
Rectangular shape enhances the ease of PCB layout and assembly.
Terminal Form: GULL WING
Gull wing terminals provide secure connections and are ideal for surface mounting.
Operating Mode: ENHANCEMENT MODE
Enhancement mode operation allows for easy control of the transistor, leading to improved performance in switching applications.
Maximum Drain Current (Abs) (ID): 0.68 A
With a maximum drain current of 0.68A, this transistor can handle higher current loads, ensuring reliable operation.
No. of Terminals: 3
Three terminals provide standard connectivity for various circuit designs.
Maximum Power Dissipation (Abs): 0.35 W
With a maximum power dissipation of 0.35W, this transistor can handle moderate power levels efficiently.
Package Style (Meter): SMALL OUTLINE
Small outline package style saves space on the PCB, making it suitable for compact electronic devices.
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Metal-oxide semiconductor technology ensures high reliability and performance in various operating conditions.
Maximum Operating Temperature: 150 °C
High maximum operating temperature of 150°C allows for reliable operation in elevated temperature environments.
Transistor Element Material: SILICON
Silicon-based transistor element offers excellent electronic properties and durability.
Minimum Operating Temperature: -55 °C
Low minimum operating temperature of -55°C ensures reliable performance in cold environments.
Terminal Finish: Matte Tin (Sn) - annealed
Matte tin finish provides corrosion resistance and ensures secure connections.
Maximum Drain Current (ID): 0.68 A
With a maximum drain current of 0.68A, this transistor can handle higher current loads efficiently.
Maximum Drain-Source On Resistance: 0.45 ohm
Low drain-source on resistance of 0.45 ohms ensures efficient performance in switching applications.
Terminal Position: DUAL
Dual terminal position provides flexibility in circuit connections.
Maximum Time At Peak Reflow Temperature (s): 30
With a maximum reflow time of 30s at peak temperature, the transistor can be soldered efficiently onto the PCB.
Peak Reflow Temperature °C: 260
High peak reflow temperature of 260°C ensures reliable soldering and connection integrity.
