2N7002 Vishay Intertechnology

Manufacturer

Vishay Intertechnology
Mfg Part Number

2N7002
In Stock

11444
Unit Price

$0.060
Lifecycle Status

Discontinued

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Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;

We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.

Specifications
Feature Benefit Bullets

Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.115 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.2 W
Maximum Drain-Source On Resistance:	7.5 ohm
Maximum Feedback Capacitance (Crss):	5 pF
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Maximum Drain Current (Abs) (ID):	.115 A

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a range of applications.

Polarity or Channel Type: N-CHANNEL

Offers good conductivity and performance in N-channel applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient built-in diode allows for versatile functionality in switching applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Easy to mount on PCBs, saving space and making the product suitable for compact designs.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages, improving its versatility.

Maximum Power Dissipation (Abs): 0.2 W

Efficient power usage and heat dissipation, ensuring reliable performance under varying conditions.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, making it suitable for various industrial applications.

Transistor Element Material: SILICON

Common semiconductor material known for its reliability and performance in electronic devices.

Maximum Drain-Source On Resistance: 7.5 ohm

Low on-resistance leads to efficient power usage and minimal heat generation in the transistor.

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