MMBT3904LT1G Onsemi
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ManufacturerOnsemi
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Mfg Part NumberMMBT3904LT1G
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In StockNo Quantity Available
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Lifecycle StatusActive
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Description
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| Nominal Transition Frequency (fT): | 300 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .2 A |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Maximum Turn On Time (ton): | 70 ns |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .3 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 250 ns |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | ONSONSMMBT3904LT1G<br>2156-MMBT3904LT1G-OS<br>MMBT3904LT1GOS-ND<br>MMBT3904LT1GOS<br>MMBT3904LT1GOSCT<br>MMBT3904LT1GOSTR<br>MMBT3904LT1GOSDKR<br>2832-MMBT3904LT1GTR |
| JEDEC-95 Code: | TO-236AB |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 30 |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 40 V |
| Peak Reflow Temperature (C): | 260 |
Package Body Material: PLASTIC/EPOXY
The use of plastic/epoxy material in the package body makes the transistor lightweight, durable, and cost-effective.
Polarity or Channel Type: NPN
NPN transistors are commonly used and easily interchangeable, making this product versatile and compatible with existing circuit designs.
Configuration: SINGLE
The single configuration simplifies the circuit design and makes it easier to use in various applications.
Surface Mount: YES
Being surface-mount compatible allows for easier and more efficient PCB assembly and space-saving designs.
Maximum Power Dissipation (Abs): 0.3 W
With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels without overheating or failing.
Minimum DC Current Gain (hFE): 30
A minimum DC current gain of 30 ensures reliable and consistent amplification in various electronic circuits.
Maximum Operating Temperature: 150 °C
The high maximum operating temperature of 150°C allows the transistor to operate in harsh environments without performance degradation.
Maximum Collector-Emitter Voltage: 40 V
The high maximum collector-emitter voltage rating of 40 V provides flexibility in voltage range for different applications.
Max Turn On Time (ton): 70 ns
The fast turn-on time of 70 ns ensures quick response in switching applications, improving overall efficiency.
Maximum Collector Current (IC): 0.2 A
With a maximum collector current of 0.2 A, this transistor can handle moderate current levels in various electronic circuits.
Nominal Transition Frequency (fT): 300 MHz
The high nominal transition frequency of 300 MHz indicates good high-frequency performance, suitable for RF and switching applications.
