2N2222A Texas Instruments
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ManufacturerTexas Instruments
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Mfg Part Number2N2222A
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In StockNo Quantity Available
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Lifecycle StatusDiscontinued
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Description
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| Nominal Transition Frequency (fT): | 300 MHz |
| Package Body Material: | METAL |
| Maximum Collector Current (IC): | .8 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 35 ns |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .5 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| Maximum Turn Off Time (toff): | 285 ns |
| JESD-30 Code: | O-MBCY-W3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | COLLECTOR |
| JEDEC-95 Code: | TO-18 |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 50 |
| Minimum Operating Temperature: | -65 Cel |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 40 V |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
Package Body Material: METAL
This product is made with a metal package body which provides durability and enhanced heat dissipation, making it suitable for high-power applications.
Polarity or Channel Type: NPN
The NPN configuration allows for easy integration with other components and circuits, making this product versatile and compatible with a wide range of applications.
Configuration: SINGLE
With a single configuration, this transistor simplifies circuit design and reduces complexity, making it a convenient choice for various electronic projects.
Transistor Application: SWITCHING
Designed specifically for switching applications, this transistor offers fast turn-on and turn-off times, allowing for efficient and precise control in electronic switching systems.
Package Shape: ROUND
The round package shape ensures easy installation and ensures a compact footprint, making it suitable for space-constrained applications.
Terminal Form: WIRE
The wire terminals of this transistor facilitate easy connection and soldering, making it user-friendly and efficient for circuit assembly.
No. of Elements: 1
With a single transistor element, this product simplifies circuit design and helps reduce costs, making it an economical choice for various electronic applications.
No. of Terminals: 3
The three terminals provide straightforward connectivity and flexibility in circuit design, ensuring compatibility with a wide range of electronic systems.
Maximum Power Dissipation (Abs): 0.5 W
With a maximum power dissipation of 0.5 Watts, this transistor can handle moderate power requirements efficiently and reliably.
Package Style (Meter): CYLINDRICAL
The cylindrical package style allows for easy integration and installation, making it suitable for a variety of compact electronic devices.
Minimum DC Current Gain (hFE): 50
With a minimum DC current gain of 50, this transistor ensures reliable amplification and signal control in electronic circuits, maximizing circuit performance.
Maximum Operating Temperature: 175 °C
With a maximum operating temperature of 175°C, this transistor can withstand high-temperature environments, ensuring long-lasting performance and reliability.
Maximum Collector-Emitter Voltage: 40 V
The maximum collector-emitter voltage of 40 Volts allows for use in various voltage applications, providing flexibility and compatibility.
Transistor Element Material: SILICON
Made from silicon, this transistor offers excellent performance and reliability, ensuring stable operation and suitability for a wide range of electronic applications.
Maximum Turn On Time (ton): 35 ns
With a maximum turn-on time of 35 nanoseconds, this transistor enables fast switching and response, making it ideal for applications requiring quick and precise control.
Minimum Operating Temperature: -65 °C
With a minimum operating temperature of -65°C, this transistor can withstand extremely low-temperature environments, making it suitable for diverse applications.
Maximum Collector Current (IC): 0.8 A
With a maximum collector current of 0.8 Amperes, this transistor can handle moderate current requirements, making it suitable for various electronic systems.
Maximum Turn Off Time (toff): 285 ns
The maximum turn-off time of 285 nanoseconds ensures efficient switching and reduces power consumption, making this transistor suitable for high-frequency applications.
Terminal Position: BOTTOM
The bottom terminal position allows for easy PCB layout and ensures straightforward integration in electronic circuits, reducing assembly complexity.
Case Connection: COLLECTOR
The collector case connection simplifies circuit design and enhances thermal management, improving overall performance and reliability.
Nominal Transition Frequency (fT): 300 MHz
With a nominal transition frequency of 300 Megahertz, this transistor offers high-speed switching capability, making it suitable for high-frequency applications and fast data processing.