2N2222A by Texas Instruments

2N2222A Texas Instruments

  • Manufacturer
    Texas Instruments
  • Mfg Part Number
    2N2222A
  • In Stock
    No Quantity Available
  • Lifecycle Status
    Discontinued

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Description

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

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Nominal Transition Frequency (fT): 300 MHz
Package Body Material: METAL
Maximum Collector Current (IC): .8 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 35 ns
Sub-Category: Other Transistors
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): .5 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
Maximum Turn Off Time (toff): 285 ns
JESD-30 Code: O-MBCY-W3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
JEDEC-95 Code: TO-18
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 50
Minimum Operating Temperature: -65 Cel
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 40 V
Peak Reflow Temperature (C): NOT SPECIFIED

Package Body Material: METAL

This product is made with a metal package body which provides durability and enhanced heat dissipation, making it suitable for high-power applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration with other components and circuits, making this product versatile and compatible with a wide range of applications.

Configuration: SINGLE

With a single configuration, this transistor simplifies circuit design and reduces complexity, making it a convenient choice for various electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast turn-on and turn-off times, allowing for efficient and precise control in electronic switching systems.

Package Shape: ROUND

The round package shape ensures easy installation and ensures a compact footprint, making it suitable for space-constrained applications.

Terminal Form: WIRE

The wire terminals of this transistor facilitate easy connection and soldering, making it user-friendly and efficient for circuit assembly.

No. of Elements: 1

With a single transistor element, this product simplifies circuit design and helps reduce costs, making it an economical choice for various electronic applications.

No. of Terminals: 3

The three terminals provide straightforward connectivity and flexibility in circuit design, ensuring compatibility with a wide range of electronic systems.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5 Watts, this transistor can handle moderate power requirements efficiently and reliably.

Package Style (Meter): CYLINDRICAL

The cylindrical package style allows for easy integration and installation, making it suitable for a variety of compact electronic devices.

Minimum DC Current Gain (hFE): 50

With a minimum DC current gain of 50, this transistor ensures reliable amplification and signal control in electronic circuits, maximizing circuit performance.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can withstand high-temperature environments, ensuring long-lasting performance and reliability.

Maximum Collector-Emitter Voltage: 40 V

The maximum collector-emitter voltage of 40 Volts allows for use in various voltage applications, providing flexibility and compatibility.

Transistor Element Material: SILICON

Made from silicon, this transistor offers excellent performance and reliability, ensuring stable operation and suitability for a wide range of electronic applications.

Maximum Turn On Time (ton): 35 ns

With a maximum turn-on time of 35 nanoseconds, this transistor enables fast switching and response, making it ideal for applications requiring quick and precise control.

Minimum Operating Temperature: -65 °C

With a minimum operating temperature of -65°C, this transistor can withstand extremely low-temperature environments, making it suitable for diverse applications.

Maximum Collector Current (IC): 0.8 A

With a maximum collector current of 0.8 Amperes, this transistor can handle moderate current requirements, making it suitable for various electronic systems.

Maximum Turn Off Time (toff): 285 ns

The maximum turn-off time of 285 nanoseconds ensures efficient switching and reduces power consumption, making this transistor suitable for high-frequency applications.

Terminal Position: BOTTOM

The bottom terminal position allows for easy PCB layout and ensures straightforward integration in electronic circuits, reducing assembly complexity.

Case Connection: COLLECTOR

The collector case connection simplifies circuit design and enhances thermal management, improving overall performance and reliability.

Nominal Transition Frequency (fT): 300 MHz

With a nominal transition frequency of 300 Megahertz, this transistor offers high-speed switching capability, making it suitable for high-frequency applications and fast data processing.

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