2N7002-7-F Diodes Incorporated

Manufacturer

Diodes Incorporated
Mfg Part Number

2N7002-7-F
In Stock

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Lifecycle Status

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Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Qualification: Not Qualified;

We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.

Specifications
Feature Benefit Bullets

Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.115 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	13.5 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	5 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY, LOW THRESHOLD
Maximum Drain Current (Abs) (ID):	.115 A
Peak Reflow Temperature (C):	260

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching in electronic circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance.

Minimum DS Breakdown Voltage: 60 V

Can handle relatively high voltages, making it suitable for a variety of applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Includes a built-in diode, simplifying circuit design and saving space.

Maximum Drain Current (Abs) (ID): 0.115 A

Capable of handling moderately high currents, suitable for many electronic systems.

Maximum Power Dissipation (Abs): 0.3 W

Can dissipate heat effectively, preventing overheating and ensuring reliability.

Maximum Drain-Source On Resistance: 13.5 ohm

Low on-resistance contributes to efficient switching and power handling.

Maximum Operating Temperature: 150 °C

Can operate at relatively high temperatures, suitable for various environments.

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