MMBT3906LT1G Onsemi

Manufacturer

Onsemi
Mfg Part Number

MMBT3906LT1G
In Stock

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Lifecycle Status

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Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;

We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.

Specifications
Feature Benefit Bullets

Nominal Transition Frequency (fT):	250 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.2 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Maximum Turn On Time (ton):	70 ns
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	300 ns
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
Other Names:	MMBT3906LT1GOS-ND<br>MMBT3906LT1GOSTR<br>MMBT3906LT1GOS<br>2156-MMBT3906LT1G-OS<br>MMBT3906LT1GOSDKR<br>ONSONSMMBT3906LT1G<br>MMBT3906LT1GOSCT
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	30
JESD-609 Code:	e3
Minimum Operating Temperature:	-65 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	40 V
Maximum Collector-Base Capacitance:	4.5 pF
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.4 V

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components and ensures durability of the transistor.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Surface Mount: YES

Allows for easy and efficient mounting on PCBs, saving space and simplifying assembly processes.

Maximum VCEsat: 0.4 V

Low VCEsat ensures minimal power loss and high efficiency in operation.

Minimum DC Current Gain (hFE): 30

High DC current gain ensures good amplification capabilities for the transistor.

Maximum Collector-Emitter Voltage: 40 V

Allows for operation in a wide range of voltage applications.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast switching speeds, suitable for high-frequency applications.

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