IRLML6401TRPBF Infineon Technologies

Manufacturer

Infineon Technologies
Mfg Part Number

IRLML6401TRPBF
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Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;

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Specifications
Feature Benefit Bullets

Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	4.3 A
Maximum Pulsed Drain Current (IDM):	34 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	1.3 W
Maximum Drain-Source On Resistance:	.05 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	33 mJ
Maximum Feedback Capacitance (Crss):	125 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	12 V
Qualification:	Not Qualified
Additional Features:	ULTRA LOW RESISTANCE
Maximum Drain Current (Abs) (ID):	4.3 A
Peak Reflow Temperature (C):	260

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body makes this FET durable and resistant to external elements, ensuring a long lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel design allows for efficient control and switching capabilities, making this FET suitable for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode in this FET simplifies circuit design and enhances overall performance, making it a practical choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers reliable performance and efficient operation in a wide range of scenarios.

Surface Mount: YES

With the ability to be surface-mounted, this FET can save valuable space on the circuit board and streamline the manufacturing process.

Minimum DS Breakdown Voltage: 12 V

The minimum breakdown voltage of 12V ensures that this FET can handle the required voltage levels, making it a reliable choice for various applications.

Package Shape: RECTANGULAR

The rectangular package shape offers easy integration into circuit designs and allows for efficient use of space in the circuit layout.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering, ensuring a reliable electrical connection in the circuit.

Operating Mode: ENHANCEMENT MODE

With enhancement mode operation, this FET offers precise control and high performance, making it a versatile choice for switching applications.

Maximum Pulsed Drain Current (IDM): 34 A

The high maximum pulsed drain current rating of 34A allows for handling of peak current loads, making this FET suitable for high-power applications.

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