BSS138LT3G Onsemi
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ManufacturerOnsemi
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Mfg Part NumberBSS138LT3G
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In StockNo Quantity Available
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Lifecycle StatusActive
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Description
We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .2 A |
| Sub-Category: | FET General Purpose Powers |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .225 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | 3.5 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | 2832-BSS138LT3GTR<br>2156-BSS138LT3G-OS<br>BSS138LT3GOSDKR<br>BSS138LT3GOSTR<br>BSS138LT3G-ND<br>ONSONSBSS138LT3G<br>BSS138LT3GOSCT<br>=BSS138LT3GOSCT-ND |
| Maximum Feedback Capacitance (Crss): | 5 pF |
| JEDEC-95 Code: | TO-236 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 50 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | .2 A |
| Peak Reflow Temperature (C): | 260 |
Package Body Material: PLASTIC/EPOXY
Provides durability and protects the internal components of the transistor, ensuring a longer lifespan.
Polarity or Channel Type: N-CHANNEL
Allows for efficient current flow and control in the specified direction, enhancing the performance of the transistor.
Transistor Application: SWITCHING
Suitable for switching applications, making it versatile and ideal for various electronic circuits.
Minimum DS Breakdown Voltage: 50 V
With a high breakdown voltage, this transistor can handle higher voltages without malfunctioning or breaking down.
Operating Mode: ENHANCEMENT MODE
Operates in enhancement mode, which allows for efficient switching and control of the transistor.
Maximum Drain Current (ID): 0.2 A
Capable of handling a maximum drain current of 0.2 A, suitable for various low power applications.
Maximum Drain-Source On Resistance: 3.5 ohm
Low drain-source on resistance ensures minimal power loss and efficient performance of the transistor.
Maximum Operating Temperature: 150 °C
With a high operating temperature range, this transistor can withstand heat and operate reliably in various environments.
