BSS138PS,115 NXP Semiconductors
-
ManufacturerNXP Semiconductors
-
Mfg Part NumberBSS138PS,115
-
In Stock5765
-
Unit Price$0.060
-
Lifecycle StatusTransferred
Request Quote
Description
We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | .32 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 6 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: | 1.6 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Additional Features: | LOGIC LEVEL COMPATIBLE |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |
Package Body Material: PLASTIC/EPOXY
The plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.
Polarity or Channel Type: N-CHANNEL
N-Channel transistors typically have better conductivity and lower resistance, making them efficient for switching applications.
Transistor Application: SWITCHING
Designed specifically for switching applications, ensuring reliable performance in on/off states.
Minimum DS Breakdown Voltage: 60 V
With a minimum breakdown voltage of 60 V, this transistor can handle higher voltages, adding to its versatility.
Surface Mount: YES
Surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying assembly processes.
Maximum Drain Current (ID): 0.32 A
With a maximum drain current of 0.32 A, this transistor can handle moderate current loads with efficiency.
Maximum Drain-Source On Resistance: 1.6 ohm
Low drain-source resistance of 1.6 ohm ensures minimal power loss and efficient performance in switching applications.
