BSS138PS,115 by NXP Semiconductors

BSS138PS,115 NXP Semiconductors

  • Manufacturer
    NXP Semiconductors
  • Mfg Part Number
    BSS138PS,115
  • In Stock
    5765
  • Unit Price
    $0.060
  • Lifecycle Status
    Transferred

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Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

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Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .32 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 1.6 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Additional Features: LOGIC LEVEL COMPATIBLE
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have better conductivity and lower resistance, making them efficient for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in on/off states.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60 V, this transistor can handle higher voltages, adding to its versatility.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying assembly processes.

Maximum Drain Current (ID): 0.32 A

With a maximum drain current of 0.32 A, this transistor can handle moderate current loads with efficiency.

Maximum Drain-Source On Resistance: 1.6 ohm

Low drain-source resistance of 1.6 ohm ensures minimal power loss and efficient performance in switching applications.

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