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    Diodes Incorporated

BSS84-7-F by Diodes Incorporated

BSS84-7-F Diodes Incorporated

  • Manufacturer
    Diodes Incorporated
  • Mfg Part Number
    BSS84-7-F
  • In Stock
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Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .13 A;

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Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .13 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 10 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 12 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 50 V
Qualification: Not Qualified
Additional Features: HIGH RELIABILITY, LOW THRESHOLD
Maximum Drain Current (Abs) (ID): .13 A
Peak Reflow Temperature (C): 260

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is durable and can protect the transistor from physical damage, making it a reliable choice for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors offer low on-resistance and high input impedance, making them suitable for switching applications and power management circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for protection against reverse current flow, increasing the reliability and efficiency of the transistor.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of current, making it ideal for use in digital circuits and power supplies.

Surface Mount: YES

Being surface mountable, this transistor can easily be mounted on PCBs, saving space and simplifying the manufacturing process.

Minimum DS Breakdown Voltage: 50 V

With a minimum breakdown voltage of 50V, this transistor can handle higher voltages, making it suitable for a variety of industrial and automotive applications.

Maximum Drain Current (Abs) (ID): 0.13 A

Capable of handling a maximum drain current of 0.13A, this transistor can efficiently switch high currents without overheating or failing prematurely.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels without getting damaged, ensuring reliable operation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can operate reliably in harsh environments without any performance degradation.

Maximum Drain-Source On Resistance: 10 ohm

The low on-resistance of 10 ohms ensures minimal voltage drop across the transistor, resulting in efficient power management and reduced heat generation.

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