MMBT2907ALT1G by Onsemi

MMBT2907ALT1G Onsemi

  • Manufacturer
    Onsemi
  • Mfg Part Number
    MMBT2907ALT1G
  • In Stock
    No Quantity Available
  • Lifecycle Status
    Active

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Description

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;

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Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .6 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 45 ns
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): .225 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 100 ns
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 100
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 60 V
Peak Reflow Temperature (C): 260

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging makes the transistor lightweight and cost-effective compared to other materials.

Polarity or Channel Type: PNP

PNP transistors complement certain circuit designs and can be used in a wide range of applications.

Transistor Application: SWITCHING

Designed for switching applications, ensuring efficient performance in control circuits.

Surface Mount: YES

Surface mount capability makes it easy to integrate into PCBs, saving space and allowing for automated assembly processes.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum voltage rating, this transistor can be used in a variety of applications requiring higher voltage handling.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, suitable for demanding environments and applications.

Nominal Transition Frequency (fT): 200 MHz

High transition frequency allows for faster switching speeds, making it suitable for high-frequency applications.

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