MMBT2222ALT1G Onsemi

Manufacturer

Onsemi
Mfg Part Number

MMBT2222ALT1G
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Description

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;

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Specifications
Feature Benefit Bullets

Nominal Transition Frequency (fT):	300 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.6 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	35 ns
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	285 ns
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	75
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	40 V
Peak Reflow Temperature (C):	260

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching circuits, amplifiers, and various electronic applications, providing versatility.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers reliable performance and fast response times.

Maximum Power Dissipation: 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels efficiently.

Minimum DC Current Gain (hFE): 75

A high minimum DC current gain of 75 ensures stable and consistent amplification in various circuit designs.

Maximum Collector-Emmitter Voltage: 40 V

The high maximum collector-emitter voltage of 40 V allows for operation in a wide range of voltage levels.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments.

Nominal Transition Frequency (fT): 300 MHz

The high nominal transition frequency of 300 MHz ensures fast response and high-frequency operation, making it ideal for high-speed applications.

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