FDN5618P Onsemi
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ManufacturerOnsemi
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Mfg Part NumberFDN5618P
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In StockNo Quantity Available
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Lifecycle StatusActive
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Description
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| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 1.25 A |
| Maximum Pulsed Drain Current (IDM): | 10 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .5 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .17 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 1.25 A |
| Peak Reflow Temperature (C): | 260 |
Package Body Material: PLASTIC/EPOXY
The plastic/epoxy material used for the package body provides good insulation and protection for the internal components of the FET.
Polarity or Channel Type: P-CHANNEL
P-channel FETs are known for their low ON resistance and high current-carrying capability, making them ideal for high-power switching applications.
Configuration: SINGLE WITH BUILT-IN DIODE
The built-in diode simplifies circuit design and protects against reverse voltage spikes, enhancing the reliability of the FET.
Transistor Application: SWITCHING
Designed specifically for switching applications, this FET offers fast switching speeds and low ON-resistance for efficient power control.
Surface Mount: YES
Surface mount technology allows for easy and efficient assembly onto PCBs, saving space and reducing manufacturing costs.
Minimum DS Breakdown Voltage: 60 V
With a high breakdown voltage, this FET can safely handle higher voltages, providing added protection for the circuit.
Maximum Drain Current (ID): 1.25 A
The high maximum drain current rating allows for superior power-handling capabilities, making it suitable for a variety of high-current applications.
Maximum Power Dissipation (Abs): 0.5 W
The low power dissipation helps in reducing heat generation and improving efficiency, leading to better overall performance of the FET.
Maximum Operating Temperature: 150 °C
With a high maximum operating temperature, this FET can withstand elevated temperatures without compromising its performance, ensuring reliability in harsh environments.
