FDD5614P Onsemi

Manufacturer

Onsemi
Mfg Part Number

FDD5614P
In Stock

No Quantity Available
Lifecycle Status

Discontinued

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Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Moisture Sensitivity Level (MSL): 1;

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Specifications
Feature Benefit Bullets

Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	15 A
Maximum Pulsed Drain Current (IDM):	45 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	42 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.1 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	90 mJ
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	15 A
Peak Reflow Temperature (C):	260

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this FET lightweight and durable, ideal for portable and rugged applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs offer low on-resistance and high current-carrying capabilities, making them efficient for power management applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against back EMF, offering added convenience and reliability.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET provides fast and efficient control over power flow in a circuit.

Surface Mount: YES

The surface mount capability allows for easy and compact PCB assembly, saving space and reducing overall system size.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this FET can handle higher voltage levels without the risk of damage, ensuring safe and reliable operation.

Package Shape: RECTANGULAR

The rectangular shape of the package offers versatility in mounting options and compatibility with various layouts, enhancing ease of installation.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections, reducing the risk of signal loss or disconnection.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for easy control of the FET's conductivity, enabling precise and efficient power management.

Maximum Pulsed Drain Current (IDM): 45 A

With a high pulsed drain current rating, this FET can handle sudden spikes in current without the risk of overheating or failure.

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