FDC5614P Onsemi

Manufacturer

Onsemi
Mfg Part Number

FDC5614P
In Stock

No Quantity Available
Lifecycle Status

Active

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Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Terminal Form: GULL WING; No. of Elements: 1;

We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.

Specifications
Feature Benefit Bullets

Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	34 ns
Maximum Drain Current (ID):	3 A
Maximum Pulsed Drain Current (IDM):	20 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	1.6 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	56 ns
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.105 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	39 pF
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	3 A
Peak Reflow Temperature (C):	260

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the power field effect transistor, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low resistance and high current-carrying capabilities.

Transistor Application: SWITCHING

Designed for efficient switching applications, ensuring fast and reliable operation.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this FET can handle higher voltages without breakdown, ensuring durability.

Maximum Drain Current (Abs) (ID): 3 A

Capable of handling high currents, making it suitable for power applications.

Maximum Power Dissipation (Abs): 1.6 W

Efficient power dissipation capability, ensuring stable performance under high load conditions.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, suitable for industrial and automotive applications where heat may be a concern.

Maximum Turn On Time (ton): 34 ns

Fast turn-on time ensures quick response in switching applications, improving overall efficiency.

Maximum Turn Off Time (toff): 56 ns

Fast turn-off time reduces the chances of power loss and overheating, making it a reliable choice for switching applications.

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