BSS138LT1G Onsemi

Manufacturer

Onsemi
Mfg Part Number

BSS138LT1G
In Stock

No Quantity Available
Lifecycle Status

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Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Time At Peak Reflow Temperature (s): 40; Package Shape: RECTANGULAR;

We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.

Specifications
Feature Benefit Bullets

Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.2 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.225 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	3.5 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	2156-BSS138LT1G-OS<br>BSS138LT1GOSTR<br>BSS138LT1GOSCT<br>BSS138LT1GOSDKR<br>2832-BSS138LT1G-488<br>ONSONSBSS138LT1G
Maximum Feedback Capacitance (Crss):	5 pF
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	50 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	.2 A
Peak Reflow Temperature (C):	260

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-Channel type offers better performance in terms of power efficiency and speed compared to P-Channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for protection against reverse current flow and simplifies circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in ON/OFF states.

Surface Mount: YES

Surface mount capability enables easy and efficient assembly onto circuit boards.

Minimum DS Breakdown Voltage: 50 V

Sufficient breakdown voltage ensures reliable operation under varying load conditions.

Maximum Drain Current (ID): 0.2 A

Can handle a maximum drain current of 0.2 A, suitable for low power applications.

Maximum Power Dissipation: 0.225 W

With a maximum power dissipation of 0.225 W, it can operate efficiently without overheating.

Maximum Operating Temperature: 150 °C

Wide operating temperature range of -55 to 150 °C ensures reliable performance in various environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers low power consumption and high efficiency.

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