BSS138BKW,115 NXP Semiconductors

Manufacturer

NXP Semiconductors
Mfg Part Number

BSS138BKW,115
In Stock

5641
Unit Price

$0.060
Lifecycle Status

Transferred

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Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PDSO-G3; Moisture Sensitivity Level (MSL): 1;

We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.

Specifications
Feature Benefit Bullets

Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.32 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	1.6 ohm
Moisture Sensitivity Level (MSL):	1
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Additional Features:	LOGIC LEVEL COMPATIBLE
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and helps protect the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and faster switching speeds compared to P-channel transistors.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this transistor can handle higher voltages safely.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of current in a circuit.

Surface Mount: YES

Surface mount technology allows for easy and compact PCB assembly, saving space in electronic devices.

Maximum Drain Current (ID): 0.32 A

With a maximum drain current of 0.32A, this transistor can handle moderate current loads effectively.

Maximum Drain-Source On Resistance: 1.6 ohm

Low drain-source on resistance of 1.6 ohms ensures minimal power loss and efficient operation.

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