2N7002,215 NXP Semiconductors

Manufacturer

NXP Semiconductors
Mfg Part Number

2N7002,215
In Stock

3891
Unit Price

$0.060
Lifecycle Status

Transferred

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Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;

We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.

Specifications
Feature Benefit Bullets

Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.3 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	5 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	10 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-65 Cel
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID):	.115 A
Peak Reflow Temperature (C):	260

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide good durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have higher electron mobility and faster switching speeds, making them suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for easier and more efficient circuit design, saving space and reducing component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in such scenarios.

Maximum Drain-Source On Resistance: 5 ohm

Low on-resistance leads to minimal power loss and heat generation, making the transistor energy-efficient.

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