BSS138NH6327XTSA2 Infineon Technologies
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ManufacturerInfineon Technologies
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Mfg Part NumberBSS138NH6327XTSA2
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In StockNo Quantity Available
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Lifecycle StatusActive
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Description
We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | .23 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .36 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | .36 W |
| Maximum Drain-Source On Resistance: | 3.5 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | BSS138NH6327XTSA1<br>SP000919330<br>BSS138N H6327-ND<br>BSS138NH6327XTSA2DKR<br>BSS138NH6327XTSA2CT<br>BSS138NH6327XTSA2INACTIVE<br>BSS138NH6327XTSA2TR<br>BSS138NH6327XTSA2-ND<br>BSS138N H6327<br>SP000639080 |
| Maximum Feedback Capacitance (Crss): | 3.8 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Additional Features: | LOGIC LEVEL COMPATIBLE |
| Reference Standard: | AEC-Q101; IEC-61249-2-21 |
| Peak Reflow Temperature (C): | 260 |
Package Body Material: PLASTIC/EPOXY
This material provides good protection against external elements and ensures durability.
Polarity or Channel Type: N-CHANNEL
N-channel transistors typically have better performance and efficiency compared to P-channel transistors.
Surface Mount: YES
Allows for easy and compact integration onto circuit boards.
Minimum DS Breakdown Voltage: 60 V
Suitable for applications requiring higher voltage handling capabilities.
Operating Mode: ENHANCEMENT MODE
Enhancement mode transistors offer better control and faster response times.
Maximum Power Dissipation (Abs): 0.36 W
Can handle moderate power levels without overheating.
Maximum Operating Temperature: 150 °C
Can operate efficiently even in high temperature environments.
Maximum Drain-Source On Resistance: 3.5 ohm
Low on-resistance ensures minimal power loss and high efficiency.
Maximum Drain Current (ID): 0.23 A
Able to handle a decent amount of current flow.
Maximum Feedback Capacitance (Crss): 3.8 pF
Low feedback capacitance helps in reducing signal distortion.
