2N7002 Formosa Microsemi

Manufacturer

Formosa Microsemi
Mfg Part Number

2N7002
In Stock

11444
Unit Price

$0.060
Lifecycle Status

Active

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Description

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;

We pick, pack, and dispatch all orders within 24-48 hours from order confirmation. Some parts may require additional testing to ensure the highest degree of quality.

Specifications

Maximum Power Dissipation (Abs):	.225 W
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (ID):	.115 A
Maximum Drain Current (Abs) (ID):	.115 A
Sub-Category:	FET General Purpose Power
Peak Reflow Temperature (C):	260
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES

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